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| inchange semiconductor product specification silicon npn power transistors bux84 BUX85 description ? ? with to-220c package ?high switching speed applications ? suitable for switching power supplies in tv sets pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolut maximum ratings (ta=25 ?? ) symbol parameter conditions value unit bux84 800 v cbo collector-base voltage BUX85 open emitter 1000 v bux84 400 v ceo collector-emitter voltage BUX85 open base 450 v v ebo emitter-base voltage open collector 10 v i c collector current 2 a i cm collector current-peak 3 a i b base current 0.75 a i bm base current-peak 1 a p tot total power dissipation t c =25 ?? 40 w t j junction temperature 150 ?? t stg storage temperature -65~150 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to mounting flange 2.5 k/w
inchange semiconductor product specification 2 silicon npn power transistors bux84 BUX85 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit bux84 400 v (br)ceo collector-emitter breakdown voltage BUX85 i c =100ma ; i b =0;l=25mh 450 v v cesat-1 collector-emitter saturation voltage i c =0.3a ;i b =0.03a 1.5 v v cesat-2 collector-emitter saturation voltage i c =1a ;i b =0.2a 3.0 v v besat base-emitter saturation voltage i c =1a ;i b =0.2a 1.1 v bux84 v ces =800v; v be =0 t j =125 ?? 1.0 1.5 i ces collector cut-off current BUX85 v ces =1000v; v be =0 t j =125 ?? 0.2 1.5 ma i ebo emitter cut-off current v eb =5v; i c =0 1.0 ma h fe-1 dc current gain i c =0.1a ; v ce =5v 20 100 h fe-2 dc current gain i c =0.5a ; v ce =5v 15 f t transition frequency i c =0.2a ;v ce =10v;f=1.0mhz 20 mhz switching times t on turn-on time 0.2 0.5 | s t s storage time 2 3.5 | s t f fall time i c =1a ;v cc =250v i b1 =0.2a;i b2 =-0.4a 0.4 | s inchange semiconductor product specification 3 silicon npn power transistors bux84 BUX85 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10mm) |
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